Title :
A light addressing electrochromic device
Author :
Yanzhong, Xu ; Qiu Muqing ; Naipin, Li ; Guangjun, Cao ; Sanqin, Liu
Author_Institution :
Dept. of Solid State Electron., Huazhong Univ. of Sci. & Technol., Hubei, China
Abstract :
A novel electrochromic device structure is proposed in the study of the electrochromic information memory properties. A high resistive amorphous silicon dot is intercalated between the working electrochromic layer and the electronic electrode. Focused light beam can be applied to switch on the high resistive dot, hence the memory spots are addressed in two dimensional space
Keywords :
electrochromic devices; optical storage; Si; amorphous silicon dot; focused light beam; information memory; light addressing electrochromic device; two dimensional addressing; Amorphous silicon; Electrochromic devices; Electrochromism; Electrodes; Glass; Optical films; Optical sensors; Semiconductor films; Solid state circuits; Switches;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557450
