DocumentCode
2124935
Title
A light addressing electrochromic device
Author
Yanzhong, Xu ; Qiu Muqing ; Naipin, Li ; Guangjun, Cao ; Sanqin, Liu
Author_Institution
Dept. of Solid State Electron., Huazhong Univ. of Sci. & Technol., Hubei, China
Volume
2
fYear
1996
fDate
9-12 Oct 1996
Firstpage
575
Abstract
A novel electrochromic device structure is proposed in the study of the electrochromic information memory properties. A high resistive amorphous silicon dot is intercalated between the working electrochromic layer and the electronic electrode. Focused light beam can be applied to switch on the high resistive dot, hence the memory spots are addressed in two dimensional space
Keywords
electrochromic devices; optical storage; Si; amorphous silicon dot; focused light beam; information memory; light addressing electrochromic device; two dimensional addressing; Amorphous silicon; Electrochromic devices; Electrochromism; Electrodes; Glass; Optical films; Optical sensors; Semiconductor films; Solid state circuits; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557450
Filename
557450
Link To Document