Trimming the size of InAs/InP quantum dots grown by CBE

Author

Poole, P.J. ; Williams, R.L. ; Lefebvre, J. ; McCaffrey, J.P. ; Rowell, N.

Author_Institution

Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

fYear

2000

fDate

2000

Firstpage

396

Lastpage

399

Abstract

We have used transmission electron microscopy and low temperature photoluminescence to study the growth by chemical beam epitaxy of self-assembled InAs/InP quantum dots. Square dots 30-40 nm in width were grown with a density of 10¹⁰ cm^-2. By partially covering the dots with InP and exposing them to a phosphorus overpressure the mean height of the dots, and hence their emission energies, could be controlled. The emission energy was found to be strongly dependent on the amount of InP used to partially cover the InAs dots, but only weakly dependent on the phosphorus exposure time for times greater than 15 sec

Keywords

III-V semiconductors; chemical beam epitaxial growth; indium compounds; photoluminescence; self-assembly; semiconductor growth; semiconductor quantum dots; transmission electron microscopy; 15 s; 30 to 40 nm; CBE; InAs-InP; InAs/InP quantum dots; chemical beam epitaxy; density; emission energies; low temperature photoluminescence; phosphorus overpressure; self-assembled InAs/InP quantum dots; square dots; transmission electron microscopy; trimming; Chemicals; Indium phosphide; Molecular beam epitaxial growth; Photoluminescence; Quantum dot lasers; Quantum dots; Size control; Temperature; Transmission electron microscopy; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850316

Filename

850316