Title :
Experimental study of power module with SiC devices
Author :
Dong Jiang ; Fan Xu ; Fei Wang ; Tolbert, Leon M. ; Han, T.J. ; Sung Joon Kim
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
Abstract :
This paper studies the performance of a newly designed 1200V/60A three-phase SiC power module based on parallel SiC JFETs and diodes. The conduction and the switching performance are tested from room temperature to 150°C. The switching speed of the module increases when temperature rises. In the switching performance test, the gate driver speed could bring false peak in turn-off waveform. The experimental results show that the false peak is cause by Differential-mode (DM) noises but not Common-mode (CM) noises. Finally the losses and efficiency of this power module are evaluated.
Keywords :
driver circuits; junction gate field effect transistors; power semiconductor diodes; semiconductor device testing; SiC; SiC device; common mode noise; current 60 A; differential mode noise; false peak; gate driver speed; parallel SiC JFET; parallel SiC diode; switching performance test; switching speed; temperature 150 degC; temperature 293 K to 298 K; three phase SiC power module; turn-off waveform; voltage 1200 V; JFETs; Logic gates; Multichip modules; Resistance; Silicon carbide; Switches; Switching loss;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2011 IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4577-0542-7
DOI :
10.1109/ECCE.2011.6064298
