Title :
ZnO/CdS/CuGaSe2 single crystal solar cells
Author :
Nateprov, A. ; Radautsan, S. ; Schon, J.H. ; Kloc, K. ; Riazi-Nejad, N. ; Bucher, E.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
Abstract :
The ZnO/CdS/CuGaSe2 single crystal solar cells with thermally evaporated CdS layers have been prepared. The cells with undoped and In-doped oxygen free buffer layers CdS had a low open-circuit voltages in comparision with chemically deposited CdS buffer layers. The strong oxygen influence on open-circuit voltage of devices was established. It is shown that using of oxygen during ZnO films preparation by rf-sputtering lead to high open circuit voltages for devices with thermal evaporated CdS buffer layers
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; gallium compounds; solar cells; ternary semiconductors; zinc compounds; In doping; RF sputtering; ZnO film; ZnO-CdS-CuGaSe2; ZnO/CdS/CuGaSe2 single crystal solar cell; chemically deposited buffer layer; open-circuit voltage; oxygen free buffer layer; thermally evaporated CdS layer; Buffer layers; Cooling; Glass; Optical films; Optical surface waves; Photovoltaic cells; Powders; Substrates; Temperature; Zinc oxide;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557451
