Title :
Fabrication of monolithically integrated Mach-Zehnder asymmetric interferometer switch
Author :
Liu, X.F. ; Ke, M.L. ; Qiu, B.C. ; Bryce, A.C. ; Marsh, J.H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
We report a novel method of fabricating a compact, monolithically integrated AlInGaAs Mach-Zehnder asymmetric interferometer for use as a 40 Gbit/s demultiplexer. Instead of regrowth, the plasma process damage induced quantum well intermixing was used to modify the bandgap of passive waveguides
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; demultiplexing equipment; gallium arsenide; indium compounds; integrated optics; optical fabrication; optical switches; plasma materials processing; quantum well devices; semiconductor quantum wells; 40 Gbit/s; AlInGaAs; bandgap; compact monolithically integrated AlInGaAs Mach-Zehnder asymmetric interferometer; demultiplexer; fabrication; monolithically integrated Mach-Zehnder asymmetric interferometer switch; passive waveguides; plasma process damage; quantum well intermixing; Fabrication; Nonlinear optics; Optical interferometry; Optical solitons; Optical waveguides; Photonic band gap; Pulse amplifiers; Semiconductor optical amplifiers; Switches; Ultrafast optics;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850320
