Title :
Dimorphite based UV detectors
Author :
Tsiulyanu, D. ; Golban, G. ; Kolomeyko, E. ; Gumeniuc, N. ; Melnic, O. ; Marian, S.
Author_Institution :
Dept. of Phys., Tech. Univ., Kishinev, Moldova
Abstract :
Photoelectrical properties of artificial dimorphite allow the fabrication of device structures sensitive to ultraviolet radiation. Photoconductivity spectra of these sensitive structures depend on technology of the film preparation. The result for fabricated of UV sensors are presented including experimental results for UV dosimeter
Keywords :
arsenic compounds; photoconducting devices; ultraviolet detectors; As4S3; UV detector; dimorphite film; fabrication; photoconductivity spectra; Chemicals; Detectors; Lighting; Minerals; Optical films; Photoconductivity; Substrates; Testing; Transistors; Voltage;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557455
