Title :
Monolithically integrated fabrication of 2×2 and 4×4 crosspoint switches using quantum well intermixing
Author :
Qiu, B.C. ; Ke, M.L. ; Kowalski, O.P. ; Bryce, A.C. ; Aitchison, J.S. ; Marsh, J.H. ; Owen, M. ; White, I.H. ; Penty, R.V.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
We report the fabrication of 2×2 and 4×4 crosspoint switches, in which semiconductor optical amplifiers, electro-absorption modulators, and passive waveguides were monolithically integrated on one chip, using sputtered SiO2 for quantum well intermixing. The static performance of the 2×2 switches was assessed, with the extinction ratio of the modulator being 25 dB for a reverse bias of 2 V, and inter-channel crosstalk being better than -23 dB. The gain of the amplifiers is about 8 dB
Keywords :
integrated optics; optical fabrication; photonic switching systems; quantum well devices; SiO2; SiO2 sputtered film; crosspoint switch; electroabsorption modulator; fabrication; monolithic integration; passive waveguide; quantum well intermixing; semiconductor optical amplifier; Crosstalk; Extinction ratio; Gain; Optical amplifiers; Optical device fabrication; Optical modulation; Optical switches; Optical waveguides; Semiconductor optical amplifiers; Semiconductor waveguides;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850321
