DocumentCode
2125097
Title
The dependence of the photoelectromagnetic effect upon the impurity distributions of the diffused junctions. Abrupt junctions
Author
Lakatos, Eugen
Author_Institution
Baneasa SA, Bucharest, Romania
Volume
2
fYear
1996
fDate
9-12 Oct 1996
Firstpage
595
Abstract
This paper describes the dependence of the photomagnetoelectric effect upon the impurity distributions of the abrupt diffused junctions, in constant conditions of the applied magnetic field and luminous radiation. The calculated photomagnetic voltages depending on surface concentrations and substrate impurity concentrations are exhibited
Keywords
diffusion; galvanomagnetic effects; impurity distribution; p-n junctions; photoelectricity; photoelectromagnetic effects; abrupt diffused junction; impurity distribution; photoelectromagnetic effect; Energy states; Ionization; Ionizing radiation; Model driven engineering; Photonic band gap; Semiconductor impurities; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557456
Filename
557456
Link To Document