Title :
The dependence of the photoelectromagnetic effect upon the impurity distributions of the diffused junctions. Abrupt junctions
Author_Institution :
Baneasa SA, Bucharest, Romania
Abstract :
This paper describes the dependence of the photomagnetoelectric effect upon the impurity distributions of the abrupt diffused junctions, in constant conditions of the applied magnetic field and luminous radiation. The calculated photomagnetic voltages depending on surface concentrations and substrate impurity concentrations are exhibited
Keywords :
diffusion; galvanomagnetic effects; impurity distribution; p-n junctions; photoelectricity; photoelectromagnetic effects; abrupt diffused junction; impurity distribution; photoelectromagnetic effect; Energy states; Ionization; Ionizing radiation; Model driven engineering; Photonic band gap; Semiconductor impurities; Substrates; Voltage;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557456
