Title :
A small data-line-swing read/write scheme for high-endurance nonvolatile DRAMs with ferroelectric capacitors
Author :
Sakata, T. ; Fujisawa, H. ; Sekiguchi, T. ; Torii, K. ; Kajigaya, K. ; Kimura, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
A small data-line-swing read/write scheme featuring a doubled data-line-capacitance recall technique was proposed. The proposed scheme enables nonvolatile DRAMs to approach the performance, including endurance and power consumption, of existing volatile DRAMs could be achieved.
Keywords :
DRAM chips; capacitance; ferroelectric capacitors; ferroelectric storage; data-line-swing read/write scheme; doubled data-line-capacitance recall technique; dynamic RAM; ferroelectric capacitors; high-endurance DRAMs; nonvolatile DRAMs; power consumption; Energy consumption;
Conference_Titel :
VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3339-X
DOI :
10.1109/VLSIC.1996.507713
