• DocumentCode
    2125139
  • Title

    A small data-line-swing read/write scheme for high-endurance nonvolatile DRAMs with ferroelectric capacitors

  • Author

    Sakata, T. ; Fujisawa, H. ; Sekiguchi, T. ; Torii, K. ; Kajigaya, K. ; Kimura, K.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
  • fYear
    1996
  • fDate
    13-15 June 1996
  • Firstpage
    52
  • Lastpage
    53
  • Abstract
    A small data-line-swing read/write scheme featuring a doubled data-line-capacitance recall technique was proposed. The proposed scheme enables nonvolatile DRAMs to approach the performance, including endurance and power consumption, of existing volatile DRAMs could be achieved.
  • Keywords
    DRAM chips; capacitance; ferroelectric capacitors; ferroelectric storage; data-line-swing read/write scheme; doubled data-line-capacitance recall technique; dynamic RAM; ferroelectric capacitors; high-endurance DRAMs; nonvolatile DRAMs; power consumption; Energy consumption;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-3339-X
  • Type

    conf

  • DOI
    10.1109/VLSIC.1996.507713
  • Filename
    507713
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2125139