Title :
Photodetectors on base of AlGaAs/GaAs heterostructures grown by liquid phase epitaxy using rare-earth additions
Author :
Venger, E.F. ; Semenova, G.N. ; Kryshtab, T.G. ; Svitelskiy, A.V. ; Lytvyn, P.M. ; Krukovskii, S.I.
Author_Institution :
Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
The AlxGa1-xAs/GaAs heterostructures represent a potentially useful material for photodetectors with high efficiency in spectral range 0.4 to 0.9 μm. To produce the thermostable detectors with high radiation hardness on the base of liquid phase epitaxy (LPE) the physical and chemical foundation of such epilayers formation was developed. The abilities of LPE method were improved due to utilization of multicomponent solution-melts with rare-earth additions. The horizontal sliding-boat step-cooled LPE technique with controlled composition of gaseous medium and additions of Yb in Bi and Ga-Bi-Al solution-melts was used as the basis of technology, As a result of our investigation quickly responsive photodiodes with improved technical, exploitative and economical parameters were produced
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; photodetectors; radiation hardening (electronics); semiconductor epitaxial layers; semiconductor growth; 0.4 to 0.9 micrometre; AlGaAs-GaAs; III-V semiconductors; efficiency; epilayers formation; horizontal sliding-boat step-cooled technique; liquid phase epitaxy; multicomponent solution-melts; photodetectors; radiation hardness; thermostable detectors; Costs; Detectors; Doping; Epitaxial growth; Gallium arsenide; Phase detection; Photodetectors; Photodiodes; Physics; Testing;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557461
