Title :
Ultrafast intersubband absorption switching using InGaAs/AlAsSb quantum wells
Author :
Wada, O. ; Yoshida, H. ; Neogi, A. ; Akiyama, T. ; Mozume, T. ; Geogiev, N. ; Asakawa, K.
Author_Institution :
FESTA Labs., Femtosecond Technol. Res. Assoc., Tsukuba, Japan
Abstract :
We report an experimental demonstration of absorption saturation effect as well as picosecond response of the intersubband transition in InGaAs/AlAsSb quantum wells grown on an InP substrate. This result indicates promising feature of intersubband transition in this material system for the application to all-optical switches in optical time-division multiplexing systems operating at a bit rate beyond 100 Gb/s
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; optical saturable absorption; optical switches; semiconductor quantum wells; 100 Gbit/s; InGaAs-AlAsSb; InGaAs/AlAsSb quantum well; InP; InP substrate; absorption saturation; all-optical switch; intersubband transition; optical time division multiplexing system; picosecond response; ultrafast intersubband absorption switching; Absorption; Communication switching; Indium gallium arsenide; Indium phosphide; Nonlinear optics; Optical saturation; Optical switches; Substrates; Ultrafast optics; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850325
