Title :
GaInAsN/AlGaAs distributed feedback laserdiodes at 1.3 μm
Author :
Reinhardt, M. ; Fischer, M. ; Kamp, M. ; Forchel, A.
Author_Institution :
Nanoplus Nanosyst. & Technol. GmbH, Wurzburg, Germany
Abstract :
GaInAsN quantum wells have been grown by MBE on GaAs for 1.3 μm lasers. With room temperature PL the QWs are characterized and a record low FWHM of 29 meV at a wavelength of 1.34 μm was achieved. These QWs are used in laser structures resulting in a threshold current density of 780 A/cm2 for a DQW broad area device at 1.28 μm with a dimension of 1000×100 μm2. SQW laser structures were processed to DFB lasers emitting around 1.3 μm. Longitudinal single mode emission is achieved due to coupling of the laser mode to a chromium grating which is placed along the ridge waveguide
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; 1.3 micron; GaAs substrate; GaInAsN quantum well; GaInAsN-AlGaAs; GaInAsN/AlGaAs distributed feedback laser diode; MBE growth; chromium grating; longitudinal single mode emission; photoluminescence; ridge waveguide; threshold current density; Chromium; Distributed feedback devices; Gallium arsenide; Laser feedback; Laser modes; Optical coupling; Quantum well lasers; Temperature; Threshold current; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850328
