Title :
Temperature study of the carrier lifetime in solar cells with one dominant trap energy level
Author :
Dobrescu, Dragos ; Rusu, Adrian
Author_Institution :
Politehnic Univ. of Bucharest, Romania
Abstract :
Based on experimental observation, a new mathematical model is made for explaining the carrier lifetime versus temperature dependence in silicon solar cells manufactured on p-type material with one dominant acceptor trap energy level, situated in the lower part of the forbidden band. This model explains the behaviour of the lifetime taking into account the SRH model for the lifetime and the physical parameters temperature dependencies
Keywords :
carrier lifetime; electron traps; elemental semiconductors; semiconductor device models; silicon; solar cells; SRH model; Si; acceptor trap energy level; carrier lifetime; p-type silicon; solar cell; temperature dependence; Charge carrier lifetime; Charge carrier processes; Electron traps; Electronic switching systems; Energy states; Equations; Mathematical model; Photovoltaic cells; Silicon; Temperature dependence;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557465
