Continuous-wave operation of GaInNAs/GaAs lasers grown by chemical beam epitaxy

Author

Kageyama, T. ; Miyamoto, T. ; Makino, S. ; Nishiyama, N. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

fYear

2000

fDate

2000

Firstpage

447

Lastpage

450

Abstract

We have achieved a continuous-wave (cw) lasing operation of GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy (CBE) up to 90°C. Lasing wavelength was 1.20 μm at room temperature and the threshold current density was 1.6 kA/cm² for a 50 μm width and 170 μm-long device. A characteristic temperature T₀ of 150 K (10-90°C, cw) was demonstrated. Temperature characteristics for different lasing wavelength were also investigated under pulsed condition. A 1.3 μm laser still showed T₀ of 190 K (25-50°C)

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; quantum well lasers; 1.20 micron; 10 to 90 C; GaInNAs-GaAs; GaInNAs/GaAs quantum well laser; characteristic temperature; chemical beam epitaxy; continuous wave operation; threshold current density; Chemical lasers; Epitaxial growth; Gallium arsenide; Laser beams; Molecular beam epitaxial growth; Nitrogen; Quantum well lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850329

Filename

850329