A simplified nonquasi-static table based FET model

A nonquasi-static nonlinear table-based FET model, which has been implemented into a commercial Harmonic Balance Simulator (MDS), is described and demonstrated. It makes use of a simplified nonquasi-static charge formulation and also accounts for low frequency dispersion phenomena. It can be derived, fast and simply, from dc and small signal S-parameters and is general and technology and process independent. The model is accurate under dc, small and large signal operating conditions being able to perform excellent predictions up to high frequencies and over a wide bias range. Dynamic large signal model behaviour has been validated using pseudomorphic HEMT structures, by comparing measured and simulated input and output waveforms, dynamic load line and transfer characteristics. Excellent agreement between measurements and simulation results has been achieved in the frequency range from 2 to 50 GHz.