Title :
Distributed approach for modeling integrated MESFET/HFET devices
Author :
Stiebler, W. ; Matthes, M. ; Koppel, T. ; Bock, G.
Author_Institution :
Technical University of Berlin, Department of Electrical Engineering, Microwave Engineering Group, Einsteinufer 25; 10587 Berlin, Germany; Fax: +49/30/314-24626
Abstract :
To model the distributed nature of an integrated MESFET/ HFET device for MMIC applications we introduce lossless transmission lines for the feeding structure, capacitive transmission lines for the "Cold-FET" and a new element for the frequency dependence of the gate-resistance due to the skin effect.
Keywords :
Capacitance; Distributed parameter circuits; Equivalent circuits; Frequency dependence; HEMTs; MODFETs; Propagation losses; Transmission line matrix methods; Transmission lines; Voltage;
Conference_Titel :
Microwave Conference, 1996. 26th European
Conference_Location :
Prague, Czech Republic
DOI :
10.1109/EUMA.1996.337635
