DocumentCode :
2125436
Title :
Experimental and theoretical investigation of PbTe growth by MBE on (111) BaF2 substrates
Author :
Andronik, K.I. ; Keloglu, O.Yu. ; Mazur, V.A. ; Zasavitski, E.A.
Author_Institution :
Inst. of Applied Phys., Chisinau, Moldova
Volume :
2
fYear :
1996
fDate :
9-12 Oct 1996
Firstpage :
637
Abstract :
Lead telluride films have been grown on cleaved BaF2 substrates by MBE method. Growth process was monitored by RHEED system and the crystal structure of the obtained films was investigated by θ-2θ and grazing angle X-ray tests. Optimal technological regimes are found and a phenomenological theoretical model of the MBE growth process is proposed
Keywords :
II-VI semiconductors; X-ray diffraction; crystal structure; lead compounds; materials preparation; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; BaF2; BaF2(111) substrates; MBE growth; PbTe films; PbTe-BaF2; RHEED; crystal structure; grazing angle X-ray tests; optimal technological regimes; phenomenological theoretical model; Lead compounds; Molecular beam epitaxial growth; Monitoring; System testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
Type :
conf
DOI :
10.1109/SMICND.1996.557471
Filename :
557471
Link To Document :
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