Title :
Correlation between gate current and RF power performances of millimeter HEMT´s
Author :
Gaquiere, C. ; Bonte, B ; Bourcier, E. ; Crosnier, Y.
Author_Institution :
Institut d´´Electronique et de Microelectronique du Nord U.M.R. - C.N.R.S. 9929, Departement Hyperfréquences et Semiconducteurs, Avenue Poincáre, B.P. 69, 59652 VILLENEUVE D´´ASCQ CEDEX - FRANCE
Abstract :
An original study on the power limitations of PHEMT´s is presented using the gate current as criterion. Firstly, the optimal biasing point is determined using the DC gate current. Secondly, power measurements are performed with an automated active load pull system (2640GHz) to establish correlation between gate current and output power limitation. The behaviour of the gate current versus load impedances is also investigated. It is then possible to optimize the power performances to provide physical understanding and allow a reverse engineering.
Keywords :
FETs; HEMTs; Impedance; Linearity; Microwave devices; Power generation; Power measurement; Radio frequency; Testing; Voltage;
Conference_Titel :
Microwave Conference, 1996. 26th European
Conference_Location :
Prague, Czech Republic
DOI :
10.1109/EUMA.1996.337512
