• DocumentCode
    2125439
  • Title

    Correlation between gate current and RF power performances of millimeter HEMT´s

  • Author

    Gaquiere, C. ; Bonte, B ; Bourcier, E. ; Crosnier, Y.

  • Author_Institution
    Institut d´´Electronique et de Microelectronique du Nord U.M.R. - C.N.R.S. 9929, Departement Hyperfréquences et Semiconducteurs, Avenue Poincáre, B.P. 69, 59652 VILLENEUVE D´´ASCQ CEDEX - FRANCE
  • Volume
    1
  • fYear
    1996
  • fDate
    6-13 Sept. 1996
  • Firstpage
    33
  • Lastpage
    36
  • Abstract
    An original study on the power limitations of PHEMT´s is presented using the gate current as criterion. Firstly, the optimal biasing point is determined using the DC gate current. Secondly, power measurements are performed with an automated active load pull system (2640GHz) to establish correlation between gate current and output power limitation. The behaviour of the gate current versus load impedances is also investigated. It is then possible to optimize the power performances to provide physical understanding and allow a reverse engineering.
  • Keywords
    FETs; HEMTs; Impedance; Linearity; Microwave devices; Power generation; Power measurement; Radio frequency; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1996. 26th European
  • Conference_Location
    Prague, Czech Republic
  • Type

    conf

  • DOI
    10.1109/EUMA.1996.337512
  • Filename
    4138567
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2125439