L-band internally matched front-end Si-MMIC

Author

Suematsu, Noriharu ; Ono, Masayoshi ; Kubo, Shunji ; Sato, Hisayasu ; Iyama, Yoshitada ; Ishida, Osami

Author_Institution

Information Technology R&D Center, Mitsubishi Electric Corp. 5-1-1 Ofuna, Kamakura-city, Kanagawa 247, JAPAN. Tel: Int +81 467 41 2543, Fax: Int +81 467 41 2518 or 2519, e-mail: suematsu@micro4.isl.melco.co.jp

Volume

1

fYear

1996

fDate

6-13 Sept. 1996

Firstpage

37

Lastpage

40

Abstract

A 1.9GHz-band front-end Si-MMIC was developed, which includes MOSFET T/R switch, two-stage BJT low noise amplifier (LNA), and down converter BJT mixer. This front-end IC is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits in standard 0.8Â¿m BR-CMOS process. The T/R switch of the front-end has the measured insertion loss of 2.5dB and isolation of 25.5dB at 0 / 3V control voltage. The LNA has gain of 17.1dB and noise figure (NF) of 2.9dB at 2V, 4mA d.c. supply. The mixer has conversion gain of 5.9dB and NE of l5dB at 2V, 1.7mA d.c. supply. The measured performance of this frontend IC indicates the possibility of application for mobile communication handset terminals.

Keywords

Coplanar waveguides; Integrated circuit measurements; Integrated circuit noise; L-band; Loss measurement; Low-noise amplifiers; MOSFET circuits; Monolithic integrated circuits; Switches; Switching converters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1996. 26th European

Conference_Location

Prague, Czech Republic

Type

conf

DOI

10.1109/EUMA.1996.337513

Filename

4138568