A laterally etched collector InP/InGaAs(P) DHBT process for high speed power applications

Author

Schnyder, I. ; Rohner, M. ; Gini, E. ; Huber, D. ; Bergamaschi, C. ; Jäckel, H.

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

2000

fDate

2000

Firstpage

477

Lastpage

480

Abstract

We present a selective laterally wet etched collector InP/InGaAs/InGaAsP double heterojunction bipolar transistor (DHBT) with a quaternary step graded base collector structure. This device shows a DC current gain of β=70 over a large collector current range, a breakdown voltage of BV_CEO=10.5 V, and a maximal collector emitter voltage of more than 5.5 V at 10⁵ A/cm² collector current density. A transit frequency of f_T=115 GHz and a maximum oscillation frequency of f_max=170 GHz were achieved

Keywords

III-V semiconductors; etching; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; 10.5 V; 115 GHz; 170 GHz; 5.5 V; DC current gain; InP-InGaAs-GaAsP; InP/InGaAs(P) DHBT process; InP/InGaAs/InGaAsP; breakdown voltage; double heterojunction bipolar transistor; high speed power applications; laterally etched collector; maximum oscillation frequency; quaternary step graded base collector structure; Double heterojunction bipolar transistors; Dry etching; Frequency; Gold; Indium gallium arsenide; Indium phosphide; Laboratories; Space technology; Tin; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850337

Filename

850337