Title :
Negative heap pump for low voltage operation flash memory
Author :
Mihara, M. ; Terada, Y. ; Yamada, M.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A negative heap pump circuit which is free from the threshold voltage restriction has been described. The proposed charge pump which heaps up the coupling capacitor must be a key technology for low power operative flash memories.
Keywords :
EPROM; integrated memory circuits; charge pump; coupling capacitor; flash memory; low voltage operation; negative heap pump circuit; threshold voltage; Capacitors; Charge pumps; Coupling circuits; Flash memory; Low voltage; Threshold voltage;
Conference_Titel :
VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3339-X
DOI :
10.1109/VLSIC.1996.507723
