DocumentCode :
2125566
Title :
Low-current probabilistic writes for power-efficient STT-RAM caches
Author :
Strikos, Nikolaos ; Kontorinis, Vasileios ; Xiangyu Dong ; Homayoun, Houman ; Tullsen, Dean
Author_Institution :
Univ. of California, San Diego, La Jolla, CA, USA
fYear :
2013
fDate :
6-9 Oct. 2013
Firstpage :
511
Lastpage :
514
Abstract :
MRAM has emerged as one of the most attractive non-volatile solutions due to fast read access, low leakage power, high bit density, and long endurance. However, the high power consumption of write operations remains a barrier to the commercial adoption of MRAM technology. This paper addresses this problem by introducing low-current probabilistic writes (LCPW), a technique that reduces write access energy by lowering the amplitude of the write current pulse. Although low current pulses no longer guarantee successful bit write operations, we propose and evaluate a simple technique to ensure correctness and achieve significant power reduction over a typical MRAM implementation.
Keywords :
MRAM devices; SRAM chips; cache storage; LCPW technique; MRAM technology; STT-RAM caches; low-current probabilistic write technique; magnetic RAM; nonvolatile solution; power reduction; write access energy; write current pulse; Benchmark testing; Equations; Nonvolatile memory; Probabilistic logic; Random access memory; Switches; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Design (ICCD), 2013 IEEE 31st International Conference on
Conference_Location :
Asheville, NC
Type :
conf
DOI :
10.1109/ICCD.2013.6657095
Filename :
6657095
Link To Document :
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