DocumentCode
2125583
Title
Drain current transients in InP-HFETs: equivalent circuit
Author
Gautier-Levine, A. ; Chevalier, S. ; Post, G. ; Scavennec, A.
Author_Institution
France Telecom-CNET, Marcoussis, France
fYear
2000
fDate
2000
Firstpage
489
Lastpage
492
Abstract
The presence of surface and interface traps together with impact ionization in the channel is usually observed in InP-HFETs resulting in a kink in the DC characteristics. Drain lag responses are shown to be related to this kink. An equivalent circuit model has been developed which incorporates these phenomena: this model includes a variable access source resistance which is computed at each bias point. The simulated results agree qualitatively with experimental ones
Keywords
III-V semiconductors; equivalent circuits; heterojunction bipolar transistors; impact ionisation; indium compounds; interface states; semiconductor heterojunctions; InP; InP-HFETs; drain current transients; drain lag responses; equivalent circuit; impact ionization; interface traps; surface traps; variable access source resistance; Equivalent circuits; Frequency; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Shape; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location
Williamsburg, VA
ISSN
1092-8669
Print_ISBN
0-7803-6320-5
Type
conf
DOI
10.1109/ICIPRM.2000.850340
Filename
850340
Link To Document