Title :
The effect of extrinsic capacitances on the microwave performance of Ga0.51In0.49P/GaAs MISFETs (0 nm⩽t⩽10 nm) grown by GSMBE
Author :
Lin, Yo-Sheng ; Lu, Shey-Shi
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The effect of extrinsic capacitances on the microwave performance of Ga0.51In0.49P/GaAs MISFETs was first studied experimentally and theoretically by varying the thickness of the Ga0.51In0.49P insulating layer. MISFETs with airbridge gate structure showed higher fts, and fmax s than those of MISFETs with traditional gate structure due to the lower extrinsic capacitances. Moreover, the maximum values of ft s, and fmaxs for a 1 μm gate length device all happen when t is between 50 nm and 100 nm. These results demonstrate that Ga0.51In0.49P/GaAs airbridge gate MISFETs with insulator thickness between 50 nm and 100 nm were very suitable for microwave high power device applications
Keywords :
III-V semiconductors; MISFET; capacitance; chemical beam epitaxial growth; gallium arsenide; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; GSMBE growth; Ga0.51In0.49P-GaAs; MISFET; airbridge gate; extrinsic capacitance; insulator thickness; microwave power device; Distortion; Frequency; Gallium arsenide; Insulation; Linearity; MESFETs; Metal-insulator structures; Microwave devices; Parasitic capacitance; Voltage;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557478
