DocumentCode :
2125620
Title :
Development of an all SiC high power density three-phase rectifier with interleaving
Author :
Zhang, Di ; Ning, Puqi ; Boroyevich, Dushan ; Wang, Fred ; Burgos, Rolando ; Karimi, Kamiar ; Immanuel, Vikram ; Solodovnik, Eugene
Author_Institution :
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear :
2011
fDate :
17-22 Sept. 2011
Firstpage :
4073
Lastpage :
4080
Abstract :
With interleaving, DPWM and SiC semiconductors, the design of a 15 kW high power density three-phase ac-dc rectifier is presented. The development of main passive components, main active components, and the system are reported in detail. With the presented technologies, the specific power density can be pushed to more than 2kW/lb.
Keywords :
AC-DC power convertors; PWM rectifiers; silicon compounds; SiC; ac-dc rectifier; high power density three-phase rectifier; main active components; main passive components; Capacitors; Inductors; Logic gates; Power conversion; Rectifiers; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2011 IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4577-0542-7
Type :
conf
DOI :
10.1109/ECCE.2011.6064323
Filename :
6064323
Link To Document :
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