1.5 μm wavelength strain-compensated GaInAsP/InP wirelike lasers by CH4/H2 reactive ion etching

In order to reduce non-radiative recombinations due to a large lattice mismatch at the etched/regrown interfaces, 1.5 μm GaInAsP/InP lasers with narrow wirelike (43 nm and 70 nm) active regions, which consist of partially strain-compensated 5 multiple-quantum-well structure, were realized for the first time by using EB lithography, CH ₄/H₂-reactive ion etching, and organo-metallic vapor-phase-epitaxy regrowth, As the result, lower threshold current and higher differential quantum efficiency than those of planar 5 multiple-quantum-well lasers were obtained at temperature up to 80°C. The slope efficiency of edge emitted spontaneous emission power of these wirelike lasers was almost the same as that of one-step grown 5 multiple-quantum-well lasers. These results indicate that high quality etched/regrown interfaces can be obtained with GaInAsP/InP fine structures