Title :
CH4/H2 inductively coupled plasma (ICP) etching for high performance GaInAsP buried heterostructure lasers
Author :
Kurobe, T. ; Mukaihara, T. ; Yamanaka, N. ; Iwai, N. ; Kasukawa, A.
Author_Institution :
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
We have successfully demonstrated CH4/H2 ICP etching for high performance GaInAsP buried heterostructure laser for the first time. CH4/H2 ICP etching characteristics have been investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Auger electron spectroscopy (AES). A vertical mesa structure with smooth surface was obtained under low bias voltage and low CH4/H2 ratio with sufficient etching rate. The laser showed good characteristics such as low threshold current of 4.4 mA, slope efficiency of 0.65 W/A at 20°C and high reliability at high temperature. From aging test results, estimated lifetime was over 105 hours. CH4/H2 ICP etching can become a promising technique for the fabrication of lasers and photonic integrated circuits
Keywords :
Buried layers; Gallium arsenide; Gallium compounds; III-V semiconductors; Indium compounds; Quantum well lasers; Sputter etching; Auger electron spectroscopy; CH4/H2 inductively coupled plasma etching; GaInAsP; atomic force microscopy; high performance GaInAsP buried heterostructure lasers; low threshold current; scanning electron microscopy; Aging; Atomic beams; Atomic force microscopy; Etching; Integrated circuit reliability; Low voltage; Scanning electron microscopy; Spectroscopy; Temperature; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850345
