Improved phosphorus injection synthesis for bulk indium phosphide

Author

Higgins, W.M. ; Iseler, G.W. ; Bliss, D.F. ; Bryant, G. ; Tassev, V. ; Jafri, I. ; Ware, R.M. ; Carlson, D.J.

Author_Institution

M/A-COM. Inc., Lowell, MA, USA

fYear

2000

fDate

2000

Firstpage

522

Lastpage

525

Abstract

High purity, stoichiometric InP is being produced in crucible-shaped, 3-kg charges by the phosphorus injection method in a high-pressure magnetic liquid encapsulated Czochralski (MLEC) crystal growth system. Dedicated heaters in the phosphorus injector assembly are used to heat and controllably inject the phosphorus vapor into the liquid encapsulated indium melt. Glow discharge mass spectroscopy and van der Pauw measurements of the polycrystalline charges and Czochralski wafers confirmed the low background levels of impurities

Keywords

III-V semiconductors; crystal growth from melt; indium compounds; semiconductor growth; stoichiometry; InP; P injection synthesis; glow discharge mass spectroscopy; high-pressure magnetic liquid encapsulated Czochralski crystal growth system; stoichiometric InP; van der Pauw measurements; Argon; Assembly; Atmosphere; Control system synthesis; Heat transfer; Heating; Indium phosphide; Magnetic liquids; Silicon compounds; Temperature control;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850350

Filename

850350