Title :
Long wavelength InGa(N)As/GaAs QW laser structures grown by MOVPE
Author :
Mereuta, A. ; Bouchoule, S. ; Sagnes, I. ; Alexandre, F. ; Roux, G. Le ; Decobert, J.
Author_Institution :
Groupement d´´Interet Econ., OPTO+, Marcoussis, France
Abstract :
In0.35Ga0.65NyAs1-y /GaAs (y~0-3%) quantum well (QWs) structures grown by MOVPE with room temperature photoluminescence in the 1.18-1.59 μm range and their broad area laser characteristics are presented. Infinite threshold current densities of 0.095, 1.22 and 2.3 kA/cm2 at 1.18, 1.22 and 1.24 μm emission wavelengths, for laser diodes with 0, 0.4 and 0.5% of nitrogen, were obtained, respectively. A characteristic temperature (T0) value of 80 K was determined for as-cleaved InGaAs QW lasers, while a T0 value as high as 117 K was obtained for InGaNAs (y~0.4%) QW lasers in the 20-80°C temperature range
Keywords :
III-V semiconductors; MOCVD; current density; gallium arsenide; gallium compounds; indium compounds; photoluminescence; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1.18 to 1.59 mum; 117 K; 20 C; 20 to 80 C; 80 K; In0.35Ga0.65NyAs1-y /GaAs; InGaNAs-GaAs; MOVPE; as-cleaved InGaAs QW lasers; broad area laser characteristics; characteristic temperature; long wavelength InGa(N)As/GaAs QW laser; quantum well; room temperature photoluminescence; threshold current densities; Diode lasers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Nitrogen; Photoluminescence; Quantum well lasers; Temperature distribution; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850354
