Title :
Design and application of Van Der Pol oscillator using NDR circuit
Author :
Kwang-Jow Gan ; Zheng-Jie Jiang ; Din-Yuen Chan ; Cher-Shiung Tsai ; Jian-Syong Huang ; Zhen-Kai Kao ; Wen-Kuan Yeh
Author_Institution :
Dept. of Electr. Eng., Nat. Chiayi Univ., Chiayi, Taiwan
Abstract :
We present a Van Der Pol (VDP) oscillator which is composed of a negative-differential-resistance (NDR) circuit, an inductor, and a capacitor. The core NDR circuit is consisted of five Si-based metal-oxide-semiconductor field-effect transistor (MOS) devices and one SiGe-based heterojunction bipolar transistor (HBT) device. When an external periodic signal is inputted in such circuit, it outputs various kinds of signal waveforms including the chaos signals and bifurcation sequences. A dynamic frequency divider circuit using the long-period behavior of the NDR-based chaos circuit is demonstrated. This circuit is designed using a standard 0.18 μm BiCMOS technique.
Keywords :
BiCMOS integrated circuits; MIS devices; MOSFET; bifurcation; capacitors; chaos; elemental semiconductors; frequency dividers; heterojunction bipolar transistors; inductors; integrated circuit design; relaxation oscillators; silicon; BiCMOS technique; HBT device; MOS devices; NDR circuit; NDR-based chaos circuit; VDP oscillator; Van Der Pol oscillator; bifurcation sequences; capacitor; chaos signals; circuit design; dynamic frequency divider circuit; heterojunction bipolar transistor device; inductor; negative-differential-resistance circuit; periodic signal; silicon-based metal-oxide-semiconductor field-effect transistor devices; BiCMOS integrated circuits; Bifurcation; Capacitors; Chaos; Frequency conversion; Heterojunction bipolar transistors; Oscillators;
Conference_Titel :
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4673-3036-7
DOI :
10.1109/ISNE.2013.6512358
