Improving properties of GaInNAs with a short-period GaInAs/GaNAs superlattice

Author

Hong, Y.G. ; Xin, H.P. ; Tu, C.W.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

fYear

2000

fDate

2000

Firstpage

545

Lastpage

548

Abstract

Short-period superlattices of GaInAs/GaNAs were grown by gas-source molecular beam epitaxy. Hall measurement shows that the electron mobility is improved by a factor of almost two. The photoluminescence (PL) intensity is improved by rapid thermal annealing. The PL intensity for digital alloys is 2.5 to 3 times higher than that of the random alloy at room temperature, and the improvement is even greater at low temperature (10 K) by a factor of about 12. The optimal annealing temperature was investigated from 650°C to 900°C. High temperature (above 850°C) annealing causes In and N interdiffusion and forms GaInNAs at the superlattice interface. The PL spectrum shows separation between the quantum confined level and the GaInNAs state

Keywords

Hall mobility; III-V semiconductors; chemical beam epitaxial growth; chemical interdiffusion; gallium arsenide; gallium compounds; indium compounds; interface structure; photoluminescence; rapid thermal annealing; semiconductor growth; semiconductor superlattices; spectral line intensity; 20 C; 650 to 900 C; GSMBE; GaInAs-GaNAs; GaInNAs; Hall measurement; PL intensity; digital alloys; electron mobility; gas-source molecular beam epitaxy; high temperature annealing; interdiffusion; optimal anneal temperature; photoluminescence intensity; quantum confined level; rapid thermal annealing; short-period GaInAs/GaNAs superlattice; superlattice interface; Digital alloys; Gallium arsenide; Molecular beam epitaxial growth; Nitrogen; Optical scattering; Photoluminescence; Plasma temperature; Rapid thermal annealing; Substrates; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850355

Filename

850355