Title :
GaAsSbN: a material for 1.3-1.55 μm emission
Author :
Ungaro, G. ; Sagnes, I. ; Roux, G. Le ; Largeau, L. ; Patriarche, G. ; Saint-Girons, J. ; Harmand, J.C.
Author_Institution :
Lab. CDP, France Telecom R&D, Bagneux, France
Abstract :
We have investigated the growth and the optical properties of GaAsSbN alloys and quantum wells. The material was grown on GaAs by molecular beam epitaxy with a nitrogen plasma source. We have carefully examined the nitrogen incorporation rate, and we found that it is enhanced by the presence of Sb. Similarly to GaAsN or GaInAsN, this material exhibits a strong band gap bowing allowing a significant band gap reduction with a low N content. We show that this material is an interesting alternative to InGaAsN to develop 1.3 μm and 1.55 μm laser sources on GaAs substrate: a GaAs0.836Sb0.14N0.024/GaAs quantum well has exhibited a room temperature photoluminescence peak wavelength as long as 1.6 μm. This emission is shifted to 1.5 μm after post-growth annealing. Electroluminescence spectra are also presented
Keywords :
III-V semiconductors; annealing; electroluminescence; energy gap; gallium arsenide; gallium compounds; molecular beam epitaxial growth; photoluminescence; plasma deposition; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; spectral line shift; stoichiometry; 1.3 to 1.55 mum; 20 C; GaAs; GaAs0.836Sb0.14N0.024; GaAs0.836Sb0.14N0.024/GaAs quantum well; GaAsSbN; GaAsSbN alloys; band gap reduction; electroluminescence spectra; growth; molecular beam epitaxy; nitrogen incorporation rate; nitrogen plasma source; optical properties; post-growth annealing; quantum wells; room temperature photoluminescence peak wavelength; strong band gap bowing; Gallium arsenide; Molecular beam epitaxial growth; Nitrogen; Optical materials; Photonic band gap; Plasma sources; Plasma temperature; Quantum well lasers; Stimulated emission; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850357
