Title :
TlInGaAs/InP DH structures with very small temperature-dependent bandgap energy
Author :
Asahi, H. ; Ayabe, A. ; Lee, H.-J. ; Maeda, O. ; Konishi, K. ; Asami, K. ; Gonda, S.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
TlInGaAsl/InP DH structures are grown on (100) InP substrates by gas source MBE. PL intensity for the DH structure is 10 times stronger than that of SH structure. Temperature variation of the PL peak energy is decreased with increasing Tl composition. The DH structure with Tl composition of 13% shows very small temperature variation of 0.03 meV/K. This value corresponds to the wavelength variation of 0.04 nm/K and is much smaller than the temperature variation of 0.1 nm/K for the lasing wavelength of InGaAsP/InP DFB laser diodes
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; interface structure; photoluminescence; semiconductor growth; semiconductor heterojunctions; stoichiometry; thallium compounds; (100) InP substrates; InP; PL intensity; PL peak energy; Tl composition; TlInGaAs-InP; TlInGaAs/InP DH structures; gas source MBE; lasing wavelength; small temperature-dependent bandgap energy; temperature variation; Ash; DH-HEMTs; Diode lasers; Indium gallium arsenide; Indium phosphide; Photonic band gap; Substrates; Temperature; Wavelength division multiplexing; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850358
