Title :
Towards terahertz circuits via InP micromachining techniques
Author :
Arscott, S. ; David, T. ; Mélique, X. ; Mounaix, P. ; Lippens, D.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
Abstract :
By using micromachining techniques, InP-based heterostructure barrier varactor (HBV) devices having different topological structures have been fabricated on a glass host substrate following an epitaxial transfer technique. The device characteristics have been measured and compared with devices which have been fabricated on InP substrate. The devices exhibited highly symmetrical electrical characteristics due to the preservation of the high quality MBE layers during the transfer process. A leakage current of 7 A/cm2 at 8 V together with an associated conductance value of 78 nS/μm2 were observed. RF measurements revealed a zero bias capacitance of 1.7 fF/μm2 /barrier and a capacitance ratio of 5:1
Keywords :
III-V semiconductors; capacitance; indium compounds; leakage currents; micromachining; semiconductor device measurement; semiconductor heterojunctions; varactors; 8 V; InP; InP micromachining; InP-based heterostructure barrier varactor devices; RF measurements; capacitance ratio; conductance; epitaxial transfer technique; glass host substrate; high quality MBE layers; highly symmetrical electrical characteristics; leakage current; terahertz circuits; topological structures; zero bias capacitance; Capacitance; Circuits; Electric variables; Glass; Indium phosphide; Leakage current; Micromachining; Molecular beam epitaxial growth; Substrates; Varactors;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850359
