Towards terahertz circuits via InP micromachining techniques

Author

Arscott, S. ; David, T. ; Mélique, X. ; Mounaix, P. ; Lippens, D.

Author_Institution

Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France

fYear

2000

fDate

2000

Firstpage

561

Lastpage

564

Abstract

By using micromachining techniques, InP-based heterostructure barrier varactor (HBV) devices having different topological structures have been fabricated on a glass host substrate following an epitaxial transfer technique. The device characteristics have been measured and compared with devices which have been fabricated on InP substrate. The devices exhibited highly symmetrical electrical characteristics due to the preservation of the high quality MBE layers during the transfer process. A leakage current of 7 A/cm² at 8 V together with an associated conductance value of 78 nS/μm² were observed. RF measurements revealed a zero bias capacitance of 1.7 fF/μm²/barrier and a capacitance ratio of 5:1

Keywords

III-V semiconductors; capacitance; indium compounds; leakage currents; micromachining; semiconductor device measurement; semiconductor heterojunctions; varactors; 8 V; InP; InP micromachining; InP-based heterostructure barrier varactor devices; RF measurements; capacitance ratio; conductance; epitaxial transfer technique; glass host substrate; high quality MBE layers; highly symmetrical electrical characteristics; leakage current; terahertz circuits; topological structures; zero bias capacitance; Capacitance; Circuits; Electric variables; Glass; Indium phosphide; Leakage current; Micromachining; Molecular beam epitaxial growth; Substrates; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850359

Filename

850359