Title :
Negative differential resistance of InGaAs quantum wire FET
Author :
Sugaya, T. ; Kim, S.J. ; Sugiyama, Y. ; Ogura, M.
Author_Institution :
Electrotech. Lab. & CREST, Japan Sci. & Technol. Corp., Tsukuba, Japan
Abstract :
Negative differential resistance (NDR) with high peak to valley ratio (PVR) and low onset voltage (VNDR) are clearly observed in a quantum-wire field-effect transistor (QWR-FET) with the channel width of 100 nm, while it is not observed in a QWR-FET with the channel width of 300 nm. The saturation characteristics of Landau plots indicate that the 100 nm-width QWR has one-dimensional characteristics of electron transport, contrary to the 300 nm-width QWR which has two-dimensional electrons
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; negative resistance devices; one-dimensional conductivity; quantum well devices; semiconductor device measurement; semiconductor quantum wires; 100 nm; 300 nm; InGaAs; InGaAs quantum wire FET; Landau plots; NDR; channel width; electron transport; high peak to valley ratio; low onset voltage; negative differential resistance; one-dimensional characteristics; quantum-wire field-effect transistor; saturation characteristics; Electrons; Etching; FETs; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Substrates; Temperature; Wire;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850360
