Strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor under heating and hot-carrier stresses

Reported literatures have investigated the effects of pMOSFETs with embedded SiGe source/drain stressor, but devices incorporated with biaxial strain and embedded SiGe source/drain has not been clearly probed. In this study, the characteristics of devices containing biaxial strain and embedded SiGe source/drain stressor as well as different channel lengths were explored. According to the experimental results at high temperature stress, the saturation current of the embedded SiGe source/drain pMOSFETs degraded 5.5%, which was more serious than Si-control devices´ 4.8% degradation. It is presumable that embedded SiGe source/drain induces more traps or interface states on the channel surface. In the channel hot carrier stress, the worst case in current degradation also demonstrated the identical trend.