Diagnosis of carbon content defects during nitride layer growth for nano-generation technology

This investigation considers in detail a defect called “silicon substrate damaged defects” and also introduces these defects´ forming mechanisms and their root causes. These defects are likely to become increasing important in the future of deep-sub micrometer ULSI´s situation. Two conditions typically result in silicon damaged defects during manufacturing processes namely: (1) watermark with carbon content and (2) the electrical charges accumulated on the silicon wafer surface.