Title :
Graphene oxide based device for flexible RRAM application
Author :
Chun-Chieh Lin ; Yi-Da Chen ; Nian-Cin Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Dong Hwa Univ., Hualien, Taiwan
Abstract :
The graphene oxide based device was fabricated on the flexible substrate. The reproducible resistive switching properties and the retention time of the devices that are before bending, under bending, and after bending are investigated. The experimental results indicate that the grapheme oxide based device is a potential nonvolatile memory candidate for future flexible electronics.
Keywords :
carbon compounds; graphene; random-access storage; flexible RRAM application; flexible substrate; graphene oxide based device; nonvolatile memory; reproducible resistive switching properties; Electrodes; Films; Graphene; Next generation networking; Nonvolatile memory; Substrates; Voltage measurement;
Conference_Titel :
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4673-3036-7
DOI :
10.1109/ISNE.2013.6512377
