Title :
The influence of process physics on the MOS device performance the case of the reverse short channel effect
Author :
Tsoukalas, D. ; Tsamis, C.
Author_Institution :
Inst. for Microelectron., NCSR Demokritos, Aghia Paraskevi, Greece
Abstract :
The goal of the present review is to show how material experiments using simple structures combined with process simulation can give sufficient insight to complex device phenomena that are critical for the deep submicron MOS device performance. Specifically we shall first present experimental and simulation results on the 2-D distribution of silicon interstitial both in Si and Silicon-On-Insulator. The conclusion drawn from these results will then drive our device experiments and simulations. We shall show that as predicted by the above experiments, NMOS SOI devices exhibit a reduction of the Reverse Short Channel effect (RSCE). Coupled process-device simulation reveals the influence of the fundamental point defect properties on MOS device performance
Keywords :
MIS devices; deep levels; elemental semiconductors; interstitials; point defects; silicon; 2-D distribution; MOS device performance; Si; Si interstitial; Silicon-On-Insulator; deep submicron MOS device performance; point defect properties; process physics; reverse short channel effect; Computational modeling; Computer aided software engineering; MOS devices; MOSFETs; Microelectronics; Paper technology; Physics; Silicon devices; Silicon on insulator technology; Threshold voltage;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651238
