DocumentCode :
2126502
Title :
Calculation of internal quantum efficiency of β-FeSi2 light-emitting diode
Author :
Jung-Sheng Huang ; Kuan-Wei Lee ; Jung-Chin Chang ; Chan-Cheng Yeh ; Raksavas, W.
Author_Institution :
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
fYear :
2013
fDate :
25-26 Feb. 2013
Firstpage :
409
Lastpage :
411
Abstract :
The purpose of this paper is to calculate the dc characteristics and investigate the internal quantum efficiency of β-FeSi2-based DH LED by analytical methods. The I-V characteristics of β-FeSi2 DH LED are calculated by using diffusion mechanism. The injected and leakage free electron current densities at the heterojunction between β-FeSi2 and n-Si are calculated by using thermionic emission mechanism. The ideal internal quantum efficiency η is proportional to eeVakT and η is about 0.07% at Va = 0.5V.
Keywords :
iron compounds; light emitting diodes; thermionic emission; FeSi2; diffusion mechanism; internal quantum efficiency; leakage free electron current density; light emitting diode; thermionic emission mechanism; Current density; DH-HEMTs; Educational institutions; Heterojunctions; Light emitting diodes; Next generation networking; Thermionic emission; β-FeSi2 DH LED; internal quantum efficiency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4673-3036-7
Type :
conf
DOI :
10.1109/ISNE.2013.6512381
Filename :
6512381
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2126502
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