DocumentCode
2126591
Title
Fabrication of plasmonics Si solar cells based on indium nanoparticles and TiO2 space layer
Author
Yuan-Tsz Chen ; Wen-Jeng Ho ; Yi-Yu Lee ; Jia-Ying Wu ; Hung-Pin Shiao
Author_Institution
Dept. of Electro-Opt. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
fYear
2013
fDate
25-26 Feb. 2013
Firstpage
417
Lastpage
419
Abstract
We demonstrate experimentally the photovoltaic performance enhancement of the plasmonics silicon solar cell based on nano-sized indium-particles and different thickness of TiO2 space layer. The reflectance, photo-current and external quantum efficiency are measured and compared at each stages of device processing. The conversion efficiencies enhancing of 17.78% and of 47.85% are obtained as the solar cell with indium nanoparticles on a 10-nm and a 59.5-nm thick TiO2 space layer, respectively, compared to the solar cell without coated a TiO2 layer. Furthermore, the plasmonics conversion efficiencies depend on the thickness of space layer are also demonstrated that the increasing by 15.46% and 6.08% for the solar cells with 10-nm and a 59.5-nm thick TiO2 space layer, respectively.
Keywords
elemental semiconductors; indium; nanoparticles; photoconductivity; photoemission; plasmonics; reflectivity; silicon; solar cells; titanium compounds; Si; TiO2; efficiency 17.78 percent; efficiency 47.85 percent; external quantum efficiency; nanosized indium nanoparticles; photocurrent; photovoltaic performance enhancement; plasmonics conversion efficiencies; plasmonics solar cells fabrication; reflectance; size 10 nm; size 59.5 nm; space layer; Indium; Nanoparticles; Photovoltaic cells; Photovoltaic systems; Plasmons; Reflectivity; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location
Kaohsiung
Print_ISBN
978-1-4673-3036-7
Type
conf
DOI
10.1109/ISNE.2013.6512385
Filename
6512385
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