Title :
Skew minimization techniques for 256M-bit synchronous DRAM and beyond
Author :
Jin-Man Han ; Jung-Bae Lee ; Sei-Seung Yoon ; Se-Jin Jeong ; Churoo Park ; Il-Jae Cho ; Seung-Hoon Lee ; Domg-Il Seo
Author_Institution :
Samsung Electronics Co. Ltd.
Abstract :
A major issue in designing a high speed synchronous DRAM (SDRAM) is how to minimize skews, most of which are generated due lo unequal read/write data paths, different enable/disable times between column select lines (CSLs), unequal distribution of clock and unequal cell conditions. In this paper, we will present various circuit techniques for minimization of the skews to achieve the irtaxiiiium intemal clock frequency of a 256M-hit SDRAM.
Keywords :
Random access memory; Testing;
Conference_Titel :
VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3339-X
DOI :
10.1109/VLSIC.1996.507767