Title :
A long data retention SOI-DRAM with the body refresh function
Author :
Tomishima, S. ; Morishita, F. ; Tsukude, M. ; Yamagata, T. ; Arimoto, K.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Itami, Japan
Abstract :
We have proposed a body refresh function and circuits for SOI DRAMs. The body refresh utilizes a swinging of the bit line and gives stable body potential, long dynamic data retention time and low power consumption without any increase in the chip area.
Keywords :
DRAM chips; MOS memory circuits; cellular arrays; integrated circuit design; silicon-on-insulator; SOI-DRAM; bit line swinging; body potential; body refresh function; chip area; dynamic data retention time; power consumption; Circuits; Energy consumption;
Conference_Titel :
VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3339-X
DOI :
10.1109/VLSIC.1996.507770
