DocumentCode
2126830
Title
A study of preparation and optical properties of the white OLEDs stacked with YAG and Sr2 Si5 N8 :Eu phosphors based color conversion layers
Author
Zhi Zhou ; Suqin Liu ; Younian Liu ; Yokoyama, Masafumi
Author_Institution
Key Lab. of Resources Chem. of Nonferrous Metals, Central South Univ., Changsha, China
fYear
2013
fDate
25-26 Feb. 2013
Firstpage
459
Lastpage
460
Abstract
Hybrid organic-inorganic white light emitting devices were fabricated by the phosphor cerium-doped yttrium aluminum garnet (YAG) and nitridosilicate Sr2Si5N8: Eu (258) with blue OLEDs, which emit electroluminescence spectrum with a dominant peak at 470 nm. The phosphors with different concentration were doped become color conversion layers (CCL), which could absorb blue light effectively for red and yellow, and finally mixes the unabsorbed blue emission to produce white light emission. When the concentration of YAG and 258 phosphors were fixed at concentration of 10wt% and 6wt%, respectively, with 30μm thickness of CCL and current density of 10 mA/cm2, the CIE and the luminous efficiency were (0.28,0.43) and 13.1 cd / A, respectively. All the results indicated that the hybrid organic-inorganic is a feasible approach to obtain white light emitting devices.
Keywords
current density; electroluminescence; europium; organic light emitting diodes; organic-inorganic hybrid materials; phosphors; strontium compounds; yttrium compounds; Sr2Si5N8:Eu; YAG; blue OLED; blue light; color conversion layers; current density; electroluminescence spectrum; hybrid organic-inorganic white light emitting devices; luminous efficiency; nitridosilicate; optical properties; phosphor cerium-doped yttrium aluminum garnet; size 30 mum; unabsorbed blue emission; wavelength 470 nm; white OLED; white light emission; Chemistry; Color; Metals; Next generation networking; Organic light emitting diodes; Phosphors; Scanning electron microscopy; color conversion layers; hybrid organic-inorganic; phosphor; white light emitting devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location
Kaohsiung
Print_ISBN
978-1-4673-3036-7
Type
conf
DOI
10.1109/ISNE.2013.6512397
Filename
6512397
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