A new electrode technology for high-density nonvolatile ferroelectric (SrBi/sub 2/Ta/sub 2/O/sub 9/) memories

Author

Bo Jiang ; Balu, V. ; Tung-Sheng Chen ; Shao-Hong Kuah ; Lee, J.C. ; Chu, P.Y. ; Jones, R.E. ; Zurcher, P. ; Taylor, D.J. ; Kottket, M.L. ; Gillespie, S.J.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1996

fDate

11-13 June 1996

Firstpage

26

Lastpage

27

Abstract

New electrode materials (Ir and IrO/sub 2/) are proposed for high-density nonvolatile ferroelectric random access memories (NVFERAMs). These electrodes are used in order to integrate ferroelectric (SrBi/sub 2/Ta/sub 2/O/sub 9/) capacitors with standard CMOS technology. Excellent electrical characteristics (e.g. low leakage and high polarization), good fatigue resistance and good mechanical properties (i.e. excellent adhesion to SiO/sub 2/ without using a glue layer) were obtained for the new capacitor structures.

Keywords

bismuth compounds; electrodes; ferroelectric capacitors; ferroelectric storage; random-access storage; strontium compounds; CMOS technology; Ir; IrO/sub 2/; NVFERAM; SrBi/sub 2/Ta/sub 2/O/sub 9/; adhesion; electrical characteristics; electrode material; fatigue resistance; ferroelectric capacitor; high-density nonvolatile ferroelectric random access memory; leakage; mechanical properties; polarization; CMOS technology; Capacitors; Electric resistance; Electric variables; Electrodes; Fatigue; Ferroelectric materials; Nonvolatile memory; Polarization; Random access memory;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-3342-X

Type

conf

DOI

10.1109/VLSIT.1996.507780

Filename

507780