Title :
Simulation of a novel single junction thin film solar cell
Author :
Wan-Rou Chang ; Jyi-Tsong Lin ; Yi-Chuen Eng ; Yu-Sheng Kuo ; Yun-Ru Chen ; Po-Hsieh Lin ; Jian-Yuan Wang
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
A novel single junction thin film solar cell structure ITO/p- a-Si:H /i1- a-Si:H/i2- μc-Si:H/n- μc-Si:H/ITO is studied with Silvaco TCAD tool in this paper. The simulation data predicts that the thickness of the maximum conversion efficiency is between 250-500nm. For the best efficiency, the intrinsic μc-Si:H layer is predicted between 1500-2500nm. The results indicate the conversion efficiency is higher than that of the conventional amorphous silicon solar cell 7.53% and 8.14% for the conventional microcrystalline solar cells. To compare with the nanocrystalline (nc-Si:H) heterojunction thin film solar cell, the conversion efficiency of the proposed structure is increased more than 21.92%.
Keywords :
silicon; solar cells; thin film devices; Silvaco TCAD tool; amorphous silicon solar cell; conversion efficiency; efficiency 21.92 percent; efficiency 7.53 percent; efficiency 8.14 percent; microcrystalline solar cells; nanocrystalline heterojunction thin film solar cell; single junction thin film solar cell; Amorphous silicon; Indium tin oxide; PIN photodiodes; Periodic structures; Photovoltaic cells; Short-circuit currents;
Conference_Titel :
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4673-3036-7
DOI :
10.1109/ISNE.2013.6512400
