Title :
A comparative study of advanced MOSFET structures
Author :
Wann, C.H. ; Tu, R. ; Bin Yu ; Chenming Hu ; Noda, K. ; Tanaka, T. ; Yoshida, M. ; Hui, K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
This work presents a comparative study of advanced MOSFET structures that have been proposed for around 0.1 /spl mu/m generation in the subjects of short-channel effect, drain saturation current, and relative gate delay. Our approach differs from other studies in that we emphasize compact analytical models and parametric comparison. These heuristic and analytic models are guided by experimental and simulational data. Based on these models, key device design parameters are extracted and compared. This approach provides good insight for device design, quick figure-of-merit, and a framework for analyzing a wide variety of MOSFETs. The devices in this study are : (a) uniformly-doped MOSFET, (b) delta-doped MOSFET, (c) pocket-implanted MOSFET, (d) SOI MOSFET, and (e) double-gated MOSFET. Their generic extensions cover almost every advanced MOSFET.
Keywords :
MOSFET; semiconductor device models; 0.1 micron; SOI MOSFET; analytical model; delta-doped MOSFET; device design parameters; double-gated MOSFET; drain saturation current; figure-of-merit; gate delay; heuristic model; pocket-implanted MOSFET; short-channel effect; uniformly-doped MOSFET; Analytical models; Data mining; Delay effects; MOSFET circuits;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507782
