Title :
High-performance double-layer epitaxial-channel PMOSFET compatible with a single gate CMOSFET
Author :
Matsuhashi, H. ; Ochiai, T. ; Kasai, M. ; Nakamura, T. ; Nishikawa, S.
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
High-performance double-layer epitaxial-channel PMOSFET compatible with a single-gate CMOSFET have been demonstrated. The thin epitaxial-Si channel is composed of a lower highly boron-doped (1.2-2.4/spl times/10/sup 18/ cm/sup -3/) layer and an upper nondoped layer, and is applicable to NMOSFET. This PMOS achieves the highest g/sub m/ with acceptable short-channel effects among PMOSs having various types of channels. The minimum gate delay of CMOS is 15.9 ps at 2.5 V for a CMOS ring oscillator with 10 /spl mu/m gate width.
Keywords :
MOSFET; semiconductor epitaxial layers; semiconductor technology; 10 micron; 15.9 ps; 2.5 V; CMOS ring oscillator; Si-Si:B; double-layer epitaxial-channel PMOSFET; gate delay; highly boron-doped layer; short-channel effect; single gate CMOSFET; transconductance; upper nondoped layer; CMOSFETs; Delay; MOSFET circuits; Ring oscillators;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507784
