A low temperature CVD Al plug and interconnect process for 0.25 /spl mu/m metallization technologies

Author

Fiordalice, R. ; Blumenthal, R. ; Fernandes, M. ; Garcia, S. ; Gelatos, J. ; Kawasaki, H. ; Klein, J. ; Marsh, R. ; Ong, T. ; Venkatraman, R. ; Weitzman, E. ; Pintchovski, F.

Author_Institution

Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA

fYear

1996

fDate

11-13 June 1996

Firstpage

42

Lastpage

43

Abstract

This report describes the development and integration of a blanket CVD aluminum module into advanced microprocessor devices. The in situ deposition of sputter deposited nucleation layers and PVD Al overlayers has been demonstrated to improve film morphology and ultimate reliability. Full integration into 5 level metal microprocessors has been achieved.

Keywords

aluminium; chemical vapour deposition; integrated circuit interconnections; integrated circuit metallisation; microprocessor chips; 0.25 micron; Al; PVD overlayer; blanket CVD aluminum module; film morphology; interconnect; low temperature process; microprocessor device; multilevel metallization technology; nucleation layer; plug; reliability; sputter deposition; Aluminum; Atherosclerosis; Microprocessors; Morphology; Plugs; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-3342-X

Type

conf

DOI

10.1109/VLSIT.1996.507786

Filename

507786