Title :
A low temperature CVD Al plug and interconnect process for 0.25 /spl mu/m metallization technologies
Author :
Fiordalice, R. ; Blumenthal, R. ; Fernandes, M. ; Garcia, S. ; Gelatos, J. ; Kawasaki, H. ; Klein, J. ; Marsh, R. ; Ong, T. ; Venkatraman, R. ; Weitzman, E. ; Pintchovski, F.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
This report describes the development and integration of a blanket CVD aluminum module into advanced microprocessor devices. The in situ deposition of sputter deposited nucleation layers and PVD Al overlayers has been demonstrated to improve film morphology and ultimate reliability. Full integration into 5 level metal microprocessors has been achieved.
Keywords :
aluminium; chemical vapour deposition; integrated circuit interconnections; integrated circuit metallisation; microprocessor chips; 0.25 micron; Al; PVD overlayer; blanket CVD aluminum module; film morphology; interconnect; low temperature process; microprocessor device; multilevel metallization technology; nucleation layer; plug; reliability; sputter deposition; Aluminum; Atherosclerosis; Microprocessors; Morphology; Plugs; Temperature;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507786
