Title :
Multilevel metallization based on Al CVD
Author :
Masu, K. ; Matsuhashi, H. ; Gotoh, A. ; Ju-Hyuck Chung ; Yokoyama, M. ; Tajima, R. ; Fujita, Y. ; Tsubouchi, K.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
We report the plasmaless ClF/sub 3/ pretreatment prior to the Al CVD, Al deposition on TiN layer and a new MOSFET structure as device level metallization for the Al-CVD based multilevel metallization.
Keywords :
MOSFET; aluminium; chemical vapour deposition; semiconductor device metallisation; surface treatment; Al; Al CVD; ClF/sub 3/; MOSFET; TiN; TiN layer; multilevel metallization; plasmaless ClF/sub 3/ pretreatment; MOSFET circuits; Metallization; Plasma devices; Tin;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507787
